欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
研究了Ar^＋刻蚀对InGaAs，n-InP和p-InP表面的损伤，并用湿法腐蚀后处理消除损伤．Ar^＋刻蚀后InGaAs表面均方根粗糙度较小，而n-InP和p-InP表面明显变粗糙．刻蚀后InGaAsPL强度增加，而n-InP和p-InPPL强度都减小.用XPS分析了未刻蚀、Ar^＋刻蚀和湿法腐蚀后处理三种情况下样品表面原子含量．刻蚀后InGaAs表面In和Ga含量明显增加，n-InP和p-InP表面有严重P缺失．湿法腐蚀后，样品表面原子含量和未刻蚀前基本一致．
英文摘要：
Surface damage on InGaAs, n-InP, and p-InP after Ar^＋ etching is studied, and it is removed by wet etching post treatments. After Ar^＋ etching, the root-mean-square roughness of InGaAs surface is lower, but the roughness of n-InP and p-InP surfaces is significantly higher. The photoluminescence （PL） intensity of Ar^＋ -etched InGaAs increases, but those of Ar^＋ - etched n-InP and p-InP decreases. X-ray photoelectron spectroscopy （XPS） is used to investigate the atomic concentration of three samples before Ar^＋ etching and after Ar^＋ etching and wet etching post treatments. After Ar^＋ etching,the content of In and Ga at the InGaAs surface increases markedly, and there is generally a preferential loss of P from n-InP and p-InP surfaces. The surface atomic concentration of the samples after wet etching is almost the same as before Ar^＋ etching.
同期刊论文项目
同项目期刊论文
Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs dete
Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb
Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/In
Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition o
Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microt
Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemic
期刊信息
位置：