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中文摘要：
首先介绍了InGaAs台面探测器的研究进展，然后为了验证利用台面结制作背照射器件的可行性，利用分子束外延（MBE）方法生长的掺杂InGaAs吸收层PIN InP／InGaAs／InP双异质结外延材料，通过台面制作、钝化、电极生长、背面抛光等工艺，制备了8元台面InGaAs探测器，并测试了正照射和背照射时，器件的Ⅰ-Ⅴ、信号和响应光谱。测试结果表明，正照射和背照射情况下，器件的响应信号差别不大，正照射下器件的平均峰值探测率为4．1×10^11cm·Hz^1/2·W^-1，背照射下器件的平均峰值探测率为4．0×10^11cm·Hz^1/2·W^-1，但背照射情况下器件的响应光谱在短波方向有更好的截止。
英文摘要：
The development of InGaAs mesa detectors were presented briefly, then in order to verify the feasibility of fabricating back-illuminated detectors by mesa junction, 8 × 1 elements mesa InGaAs detector arrays were made based on doped-InGaAs absorbing layer in MBE-grown PIN InP/InGaAs/InP double-heterostructure epitaxial materials, with the technics of mesa-making, passivation, growth of electrode, backside polishing and so on. Ⅰ-Ⅴ curves, response spectra and the signal of the detector were measured at the front-illuminated or back-illuminated condition. The resuits indicate that the signal is almost same at the front-illuminated and back-illuminated condition. The mean peak detectivity is 4.1 × 10^11cm · Hz^1/2 · W^-1 at the front-illuminated condition while it is 4.0 × 10^11cm · Hz^1/2 · W^-1 at the back-illuminated condition, but the response spectra of the detectors has better cut-off characteristic at the back-illuminated condition.
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