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中文摘要：
采用金属有机化学气相淀积（MOCVD）技术生长InGaAs红外探测器器件结构．器件结构为：在掺杂的InP衬底上生长2．8μm的In0.53Ga0.47As吸收层，然后再生长0．8μm的InP覆盖层．采用Zn扩散技术得到P型，从而制备出平面型p—i—n探测器器件，并对128×2线列器件的性能进行研究．测量线列探测器的I-V曲线、光谱响应曲线．所制作的128×2In0.53Ga0.47As线列器件无盲元。线列器件的平均峰值探测率D^＊为3．98×10^11cmHz^1/2W^-1．
英文摘要：
InP/In0.53Ga0.47As/InP heterostructure used for infrared detector were grown on （100） S-doped InP substrates by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn, TMGa, ASH3, and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power, their temperatures were detected by a thermocouple, and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.53Ga0.47As absorption layer with the thickness of 2.8 μm and the InP cap layer with the thickness of 0.8 μm. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of 128×2 elements InGaAs linear arrays detector were studied, the curves of the I-V characteristics, the range of spectral response, and the detectivity （D＊） were obtained.
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