欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
采用分子束外延方法生长的PIN型InP/InGaAs/InP双异质结材料制备了正照射256×1元近红外探测器,并与128×1奇偶两路读出电路互连,制备了近红外256×1元焦平面探测器.针对近红外InGaAs焦平面探测器中的无效像元问题,通过光学显微镜、扫描电镜和电学测试将无效像元进行分类,并分析了无效像元产生的原因.研究结果表明光敏芯片较低的零偏电阻、键压过程引入的损伤和虚焊以及钝化膜侧面覆盖较薄导致了无效像元的产生,通过光敏芯片设计结构改进和钝化膜工艺优化,消除了近红外256×1元InGaAs焦平面探测器的无效像元.
英文摘要：
256×1 element front-illuminated InGaAs detector arrays were fabricated by using MBE-grown p-InP/n-InGaAs/n-InP double-heterostructure epitaxial materials and were wire-bonded to 128×1 element odd and even readout integrated circuits（ROICs） in order to form near-infrared 256×1 element InGaAs focal plane arrays（FPAs）.The inoperable pixels exist in the near-infrared InGaAs FPAs.In this paper,the inoperable pixels were classified and analyzed by the optical microscope,SEM and electrical measurements.The results show that the lower resistance of photosensitive detectors at the bias voltage of 0V,the damage and false bonding,and the thinner profile of passivation film cause the inoperable pixels.The near-infrared 256×1 element InGaAs FPAs without inoperable pixels were obtained by improving the structure of photodetectors and the technics of passavition film.
同期刊论文项目
同项目期刊论文
Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs dete
Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb
Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/In
Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition o
Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microt
Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemic
期刊信息
位置：