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中文摘要：
以ZnSe多晶料的预处理为例，阐述了Ⅱ一Ⅵ族高熔点化合物的预处理方法与原理。生长单晶体，不仅仅要求原料有足够高的纯度，更为重要的是需要通过原料的预处理，获得具有合适化学比的高纯多晶原料。结合ZnSe材料的升华特性和杂质分布，对区域升华法处理工艺参数进行了分析，确定了源区温度应略低于1100℃，而沉积温度应高于900℃。选择较窄的升华一沉积温度范围更有利于杂质的去除。沉积区的温度越接近单晶生长温度，就越容易获得化晕比较为合适的原料多晶。
英文摘要：
In the present paper, the pretreatment of synthesized ZnSe polycrystalline material is studied in details on the purpose to improve the quality of source materials. Through this example, the methods and the principles of per-treatment of the high melting-point II -VI compound semiconductor materials are discussed. For single crystal growth, especially high melting-point II -VI compound semiconductor materials, such as ZnSe, the source materials are required to possess not only adequate high-purity, but also concrete stoichiometric composition. Referring to the sublimation property and impurities components of ZnSe polycrystalline material, the pre-treatment process parameters are primarily analyzed. The source and deposition temperatures are selected to be little less than 1100℃ and little higher than 900℃, respectively. The narrow temperature difference between the source and the deposition zones is favorable for removing the impurities. The concrete stoichiometric polycrystalline material, which composition is close to that of required source materials for single crystal growth, can be obtained under the condition that the deposition zone temperature is close to the single crystal growth temperature.
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