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中文摘要：
采用NH4F／H202作为p-CZT晶片的表面钝化剂，对未钝化与钝化表面处理的p—CZT晶片的C-V特性进行了对比研究。用XPS分析了钝化前后CZT晶体表面成分，发现钝化后CZT晶片表面形成厚度为3．1nm的TeO2氧化层。用Agilent 4294A高精度阻抗分析仪，在1MHz下对未钝化的和钝化的CZT晶片进行C-V测试。对测试结果的计算表明，钝化提高了Au与CZT接触的势垒高度φb．未钝化的φb为1．393V，钝化后，φb变为1．512V。
英文摘要：
By using NH4F/H2O2 as the surface passivant for p-CZT crystals, the C-V characteristics of p-CZT wafers before and after passivation surface treatments are investigated comparatively. After the passivation treatment,TeO2 oxide layer with the thickness of about 3.1 nm is obtained on the surface of CZT wafer through XPS analysis. C-V test of CZT wafers is carried out by using Agilent 4294A Precision Impedance Analyzer with the frequency of 1 MHz. The results show that passivated CZT wafer has higher barrier height,i, e. , the barrier height of passivated CZT wafer is 1. 512 V while that of non-passivated CZT wafer is 1. 393 V.
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