通过适当的工艺措施,采用传统布里奇曼法生长了尺寸为φ30mm×120mm的Cd0.8Mn0.2Te晶体.对晶体进行了X射线粉末衍射、X射线双晶摇摆曲线、紫外-可见光光谱、红外透过率及电阻率测试.测试结果表明,晶体结构为立方型,半峰宽较低,吸收边为720nm,对应禁带宽度为1.722eV,晶体的红外透过率和电阻率都较高.并讨论了晶体中的缺陷对红外透过率和电阻率的影响.
By optimizing growth parameters,a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30mm × 120mm. The as-grown crystal is characterized by X-ray powder diffractometer, X-ray double-crystal diffractometer,ultraviolet visible-near infrared spectrum, and IR transmittance and resistivity measurements. The results show that the as-grown crystal has a cubic structure with lattice constant α≈0. 6454nm, and its absorption edge is 720nm, corresponding to the band gap of 1. 722eV. The results also show high crystallinity, high IR transmittance, and high resistivity. The effect of crystal defects on the IR transmittance and resistivity is discussed.