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中文摘要：
分析了硅片纳米磨削过程中磨粒切削深度的特点，采用基于扫描白光干涉原理的三维表面轮廓仪对磨削后硅片表面的磨削沟槽的深度和宽度进行了测量，进而对磨削沟槽的深度和未变形切屑的横截面的宽高比进行了统计分析。研究表明，采用硅片自旋转磨削方法对硅片进行纳米磨削时，参与切削的磨粒数量极少，起主要切削作用的磨粒只占有效磨粒数量的一小部分，此部分磨粒的切削深度大于砂轮的切削深度，甚至可达后者的2倍；未变形切屑的截面为三角形，其宽高比在21～153之间，平均值为69。
英文摘要：
The characteristics of the cut depth of grain in nano - grinding of silicon wafers were analyzed. The depth and width of the grooves of the ground silicon wafer were measured by a 3D non-contact profilonleter based on scanning white light interfe rometry. The ground grooves and the ratio of chip width to thickness were statistically analyzed. The results show that （ 1 ） A small number of diamond grains are active during the nano-grinding of silicon wafers ; （2） A small portion of active grains removed most of the material. The cut depth of grain of the small portion of active grains is larger than the nominal cut depth of wheel, and may be up to twice as much as the latter; （3） The cross-section shape of the undeformed chip thickness is triangular, and the ratio of chip width to thickness is between 21 and 153, with a mean value of 69.
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