欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
基于自旋转磨削原理的硅片超精密磨床，采用角度抛光法和分步蚀刻法检测了树脂结合剂金刚石砂轮磨削硅片的损伤深度，利用方差分析法研究了砂轮粒度、工作台转速、砂轮进给率和砂轮转速等磨削参数对硅片损伤深度的影响规律。结果表明：磨削参数对硅片损伤深度的影响程度由大到小依次为砂轮粒度、砂轮进给率、砂轮转速和工作台转速。当砂轮的磨粒尺寸从40μm减小到4μm时，硅片的损伤深度从16．4μm逐渐减小至0．8μm。在一定的范围内，当其它磨削参数不变时，硅片的损伤深度随着砂轮进给率的增大而增大，随着砂轮转速的增大而减小，随着工作台转速的增大而减小。
英文摘要：
By using a wafer-rotating grinding machine, the subsurface damage depth （SSD） of silicon wafer ground by resin bond diamond wheel are measured by angle polishing and step etching methods. The influence of the main process factors including grit size of diamond , rotating speed of the wafer chuck table, down feed rate and the rotating speed of the grinding wheel on the SSD of ground wafer are analyzed by variance analysis. The results show that, the effect degree of grinding parameters on the SSD in order from strong to weak are the grit size, the wheel infeed rate, the wheel rotation speed and the chuck rotation speed. When the grit size decreases from 40 μm to 4 μm, the SSD decreases from 16.4 μm to 0.8 μm. When the other parameters are fixed, the SSD can be decreased with the decrease of wheel infeed, the increase of wheel rotating speed and the increase of chuck rotating speed, and the increase of chuck rotating speed within a suitable range.
同期刊论文项目
同项目期刊论文
期刊信息
位置：