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中文摘要：
设计了目标探测波长为320nm的AlGaN基共振腔增强的p-i-n型紫外光电探测器,共振腔由分别作为底镜和顶镜的AlN/Al0.3Ga0.7 N布拉格反射镜和空气/GaN界面组成,有源区p-GaN/i-GaN/n-Al0.38Ga0.62 N被置于腔内，该结构采用金属有机物化学气相淀积（MOCVD）方法在蓝宝石衬底和GaN模板上外延生长得到，光谱响应测试显示了正入射时该器件在波长313nm处出现响应的选择增强,零偏压下响应度为14mA/W。
英文摘要：
AlGaN-based resonant-cavity-enhanced p-i-n photodetectors operating at a wavelength of 320nm were designed. A 40.5-pair AIN/Al0.3 Ga0.7N distributed Bragg reflector and the air/GaN interface, serving as the back and front mirror, respectively,form a resonant cavity. In the cavity there is a p-GaN/i-GaN/n-Al0.38Ga0.62N structure. The wafer was fully epitaxial on the sapphire substrate and GaN template by metalorganic chemical vapor deposition. The response spectrum exhibits selective enhancement at 313nm,with a responsivity of 14mA/W under zero bias.
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