文中针对AlGaAs湿法氧化后器件热稳定性变差,导致性能下降的问题进行了研究。对不同氧化条件下样品的热稳定性进行了比较,证明采用降低炉温、延长氧化时间以及经过预加热处理等方法可以有效提高器件的热稳定性。利用拉曼谱分析了AlGaAs湿法氧化技术中影响热稳定性的因素,认为器件的热稳定性在一定程度上取决于湿法氧化生成物中挥发性产物含量的多少。
The effect of wet oxidization of the Al0. 98 Ga.0.02 As layer on the thermal stability of devices has been studied in different oxidation conditions. A significant improvement in thermal stability of the oxidized Al0.98 Ga.0.02 As layer has been achieved by lowing the oxidation temperature, prolong the oxidation time and preheating the samples before the oxidation, which can be used to fabricate reliable devices. The thermal stability is strongly related to the removal of volatile products as evidenced by the Raman spectroscopy.