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中文摘要：
用MOCVD系统外延生长AlGaInP材料时往往要通入过量的PH3来获得足够大的Ⅴ/Ⅲ族气体源流量比,以便得到高质量的晶体结构。分别采用1 000 ml/min和400ml/min的PH3流量（对应的Ⅴ/Ⅲ比分别为723和289）,利用低压金属有机物化学气相沉积（LP-MOCVD）系统生长了AlGaInP材料,并使用MOCVD在位监测（in-situ）软件、X射线双晶衍射仪以及光荧光测试系统等对样品进行了测量分析。发现Ⅴ/Ⅲ比不但会影响AlGaInP材料的生长速度,对外延材料与衬底GaAs的晶格失配度和材料的光学特性也有影响。
英文摘要：
Excessive phosphine is needed to get enough Ⅴ/Ⅲ ratio during common growth process of AlGaInP material by MOCVD in order to get crystal structure with high quality. AlGaInP was deposited by LP-MOCVD system with different phosphine flows （1 000 ml/min and 400 ml/min,corresponding Ⅴ/Ⅲ ratios were 723 and 289）,and the result was investigated by means of MOCVD in-situ software, double crystal X-ray diffraction system, photoluminescence （PL） and so on. It was observed that Ⅴ/Ⅲ ratio affects not only the growth rate of AlGaInP but also the crystal lattice mismatch between epitaxial material and GaAs substrate as well as optical properties of AlGaInP.
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