欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
通过对不同厚度的p-InGaN样品进行环形传输线欧姆接触实验,发现p-InGaN与Ni/Au的比接触电阻随InGaN层厚度的增大而增大,且当InGaN层的厚度小于某一特定值时,其比接触电阻低于p-GaN与Ni/Au的欧姆比接触电阻,通过分析认为这是由InGaN层的极化效应导致接触势垒降低和载流子隧穿几率增大造成的,但同时受样品表面形貌和InN本身固有的积累电子层的特性影响,当InGaN层的厚度超过这一特定值后其接触特性反而比p-GaN差。
英文摘要：
By conducting the experiments of circular transmission line method(CTLM)on samples with different thicknesses of p-InGaN,we find that the specific contact resistance between p-InGaN and Ni/Au increases as the thickness of InGaN increases.When the thickness of InGaN is less than a certain value,the specific contact resistance between p-InGaN and Ni/Au is lower than that of p-GaN s.It is attributed to the situation that the tunneling barrier width is drastically reduced by polarization-induced electric fields...
同期刊论文项目
同项目期刊论文
期刊信息
位置：