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中文摘要：
文中报道了绝缘蓝宝石衬底上的GaN基发光二极管（LEDs）中，由于横向电阻的存在造成了靠近n型电极台面边缘局部区域电流拥挤，为此从焦耳热和金属电迁移两方面研究了电流拥挤效应对器件可靠性的影响，加速寿命实验结果表明：电流均匀扩展可以使可靠性得到有效改善。
英文摘要：
Current crowding near the mesa edge due to the lateral resistance of GaN-based LEDs on the insulating sapphire substrates effects not only the LEDs performance but also the reliability characteristic. The effect or current crowding on the device reliability is reported from the Joule heating and the electromigration of contact metal in a localized region. In addition, the results of accelerated life test show the improvement of reliability through effective current spreading.
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