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中文摘要：
采用Delta掺杂技术制备了P型氮化镓薄膜，并利用原子力显微镜、霍尔测试、X射线衍射、荧光光谱等测试手段对样品的形貌和电导性能进行了分析，发现Delta掺杂样品比均匀掺杂样品晶体质量和电导性能都有很大提高，说明Delta掺杂可有效抑制缺陷，并对缺陷抑制机理进行了讨论；最后，对掺杂前的预通氨过程作了深入的研究，结果发现，预通氨对掺杂不益．
英文摘要：
Mg delta-doped GaN epilayers have been grown by metalorganic chemical vapor deposition, and their characteristics have been investigated. It is shown that not only the p-type conduction, but also the overall quality of p-GaN is improved by delladoping, it is observed that the dislocation density is reduced due to the growth interruption. A pre-purge step has been employed during delta-doping process, but the cartier concentration was decreased by the pre-purge.
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