中文摘要：

针对隧道再生半导体激光器，建立了内部热源分布模型，利用有限元方法模拟计算了两有源区隧道再生半导体激光器瞬态和稳态三维温度分布。瞬态模拟结果表明，加电后几个S的时间内两个有源区的温升很小，在几个S到几十个ms的时间内温度上升很快，几百个ms以后温度达到稳态，与测量结果吻合。稳态模拟结果表明，稳态时温升集中在脊形电极内，靠近衬底的有源区温度始终高于靠近热沉的有源区的温度。沿腔长方向存在温差，在光反射腔面附近温度下降较快。芯片内最高温度出现在靠近衬底有源区的光出射腔面的脊形电极中心。

英文摘要：

A model of Heat source is presented for tunnel regeneration semiconductor laser diodes. Three - dimensional transient and steady - state temperature - distribution of the laser diode with two active regions is simulated by using the finite element method. It is found that the temperature increase of the active regions is small during the initial several microseconds. In the range between several microseconds and some ten milliseconds the temperature of the active regions increases significantly. At some hundred milliseconds a steady- state thermal distribution is nearly reached. It is in agreement with the measured data. The temperature of two active regions is the highest initially, but the temperature of the tunnel junction increase rapidly and is higher than the temperature of the active region close to the heat sink finally. The temperature of the rear facet increases much slowly fnr the asymmetric packaging along the resonator.Steady - state temperature distribution present that temperature of the active region close to the substrate is higher than that of the active region close to the heat sink, but the temperature difference is less than O. 3K. The highest temperature is in the stripe center of the front emitting facet of the active region close to the substrate.