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中文摘要：
以In（NO3）3.·4.5H2O为主要原料,用乙酰丙酮作溶剂,掺加SnCl4·5H2O（铟锡物质的量比为10∶1）制得溶胶,以石英玻璃为基体用提拉法制得ITO膜,与已有制备方法相比,试样每次提拉后都经过500℃的退火处理,循环5次。利用表面轮廓仪、原子力显微镜、X射线衍射仪、紫外-可见分光光度计和四探针测试仪对所制样品的厚度、形貌结构和光电性能进行测试表征。实验结果表明,制备的ITO膜导电性能好,在可见光范围内透光率高,电阻率约为5.625×10-3Ω·cm,透光率为90%~95%。
英文摘要：
The ITO film was tirepared using In（NO3）3 ·4.5H2Oas the primary material and acetylacetone as the solvent, adding SnCl4 ·5H2O with the tool ratio In：Sn was 10：1, using quartz glasses as the substrates. comparing with the existing techniques, the samples in this paper were annealed at 500 ℃after each dipcoating, cycling for 5 times. The samples＇ thickness, morphology structure and performance of conductive and transparent were tested by surface profile ceremony （SPC）, atomic force spectrometry （AFM）, X-ray diffraction （XRD）, UV-Vis spectrophotometer and four-point-probe ceremony. The experimental results show that the ITO films prepared by this method havegood conductivity and high transmittance in the range of visible light with a resistivity of 5.625 × 10-3 ·Ω cm and a transmittance of 90% - 95%.
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