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中文摘要：
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器．动态元件匹配的应用很好地解决了由于集成电路工艺误差引起的不匹配对温度传感器性能的影响．采用CSMC0．5μm混合信号工艺仿真，结果显示，该温度传感器精度是0．15℃，线性度是0．15％．多个芯片实测结果表明：温度传感器精度小于0．6℃，线性度小于0．68％，功耗为587μW，芯片面积为225μm×95μm，输出为模拟电压信号，便于采集，为后端处理和应用提供方便．
英文摘要：
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology. The use of dynamic element matching enables us to solve problems caused by IC technology mismatching. Simulated results using CSMC 0.5μm mixed signal technology show that the accuracy is 0. 15℃ and the linearity is 0.15%. Measured results of several different chips show that the accuracy is within 0.6℃ and the linearity is within 0.68%. The power dissipation is 587μW and the chip area is 225μm x 95μm. The output is an analog voltage signal, which is easy to collect, process, and apply.
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