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中文摘要：
采用化学氧化聚合法制备了3，4-聚乙撑二氧噻吩（简称PEDT），并运用SEM和红外吸收光谱对其薄膜进行表征；同时将其沉积在N沟道耗尽型无金属栅场效应管上，形成以PEDT膜取代MOSFET栅金属的化学场效应管（ChcmFET）气体传感器，研究了其对氨气和温度的敏感特性。研究表明在氨气浓度低于54ppm的情况下，ChcmFET的漏电流随着氨气浓度的增加而减小，其变化量（△IDS）随氨气浓度的变化呈线性关系；同时漏电流随着负的衬底电压的增加而减小，随着温度的升高而刚氏。
英文摘要：
Poly （3,4-ethylenedioxythiophene） （PEDT） was synthesized by chemical oxidative polymerization and characterized by SEM technique and FTIR. An n-channel depletion chemical field-effect transistor （ChemFET） gas sensor has been designed and fabricated for gas detection, which consists of PEDT film deposited on the gate area of MOSFET instead of metallic material. The ammonia gas-sensitive characteristic and the temperature dependence of the ChemFET sensor were investigated. The results show that the drain current of device decreases with the increasing ammonia concentration when the ammonia concentration is below 54 ppm, and the change in the drain current （△IDS） of the ChemFET is almost linearly proportional to the concentration of ammonia. The drain current decreases with the increasing negative back-surface voltage, and decreases with the increasing temperature.
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