欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
Metal aluminum (Al) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited Al films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process.
英文摘要：
Metal aluminum （A1） thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited A1 films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process.
同期刊论文项目
同项目期刊论文
The Role of Atomic Layer Deposited Aluminum Oxide on SnO2 BasedDye-Sensitized Solar Cells Performanc
Low-Temperature Atomic Layer Deposition of High Purity, Smooth, LowResistivity Copper Films by Using
Performance improvement of inverted organic solar cells by adding ultrathin Al2O3 as an electron sel
Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer dep
Characteristicsand properties of metal aluminum thin ？lms prepared by electron cyclotronresonance pl
The influence of substrate temperature on the hydrogenated microcrystalline silicon growth through h
Numerical Simulation of the Sustaining Discharge in Radio Frequency Hollow Cathode Discharge in Argo
期刊信息
位置：