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中文摘要：
本文中，我们采用空心阴极等离子体增强化学气相沉积（MHC-PECVD）在玻璃、表面溅射氧化铟锡（ITO）的玻璃（玻璃＋ITO）以及表面溅射ITO的聚酰亚胺（PI＋ITO）柔性衬底上沉积氢化微晶硅（μc-Si：H），研究不同衬底材料对微晶硅薄膜性质的影响。我们发现在 PI＋ITO衬底上沉积薄膜的结晶率（Xc）最小，且结晶率最大值时的温度依赖沉底材料：对于 PI＋ITO 衬底来说，结晶率最大值时的温度为200℃，而对于玻璃和玻璃＋ITO 衬底来说，这个温度会在250℃－300℃之间浮动。我们认为PI＋ITO衬底上薄膜较低的结晶率与其较高的热膨胀系数（CTE）以及小分子和气体的释放有关。
英文摘要：
In this work , we employed micro-hollow cathode （MHC）to perform plasma enhanced chemical vapor deposition （PECVD）of hydrogenated microcrystalline silicon （μc-Si：H）. The impact of substrate materials on the μc-Si：H film quality was explored . Three kinds of substrates , i . e . glass , indium tin oxide （ITO）coating glass and ITO coated polyimide（PI）were selected for these researches . We found that crystalline volume fraction （notated as Xc）on the ITO coated PI substrate was the smallest in three kinds of substrates , and the temperature at maximum Xc depends on substrate materials：for ITO coated PI substrate , the temperature at maximum Xc was 200℃, whereas it was 250℃-300℃ for the glass and ITO coated glass sub-strates.We assume that the lower Xc on the ITO coated PI substrate is related to the high expansion coefficient of plastic and the small molecules and gas releasing from the substrate .
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