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Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
  • ISSN号:1009-0630
  • 期刊名称:《等离子体科学与技术:英文版》
  • 时间:0
  • 分类:TQ320.721[化学工程—合成树脂塑料工业] O484.1[理学—固体物理;理学—物理]
  • 作者机构:[1]Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication,Beijing 102600, China
  • 相关基金:supported by National Natural Science Foundation of China (No. 11175024), Beijing Natural Science Foundation (No. 1112012), 2011BAD24B01, Scientific Research Common Program of Beijing Municipal Commission of Education(KM201110015008, KM201010015005) and Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality (PHR20110516)
中文摘要:

Atomic layer deposition(ALD) technique is used in the preparation of organic/inorganic layers,which requires uniform surfaces with their thickness down to several nanometers.For film with such thickness,the growth mode defined as the arrangement of clusters on the surface during the growth is of significance.In this work,Al 2 O 3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate(PET,12 μm) by plasma assisted atomic layer deposition(PA-ALD),where trimethyl aluminium was used as the Al precursor and O 2 as the oxygen source.The interfacial species,-NH 3,-OH,and-COOH as well as SiCHO(derived from monomer of HMDSO plasma),were grafted previously by plasma and chemical treatments.The growth mode of PA-ALD Al 2 O 3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry(SE) and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy(AFM).In addition,the oxygen transmission rates(OTR) of the original and treated plastic films were measured.The possible reasons for the dependence of the OTR values on the surface species were explored.

英文摘要:

Atomic layer deposition (ALD) technique is used in the preparation of organic/inorganic layers, which requires uniform surfaces with their thickness down to several nanometers. For film with such thickness, the growth mode defined as the arrangement of clusters on the surface during the growth is of significance. In this work, Al2O3 thin film was deposited on various interfacial species of pre-treated polyethylene terephthalate (PET, 12 μm) by plasma assisted atomic layer deposition (PA-ALD), where trimethyl aluminium was used as the Al precursor and O2 as the oxygen source. The interracial species, -NH3, -OH, and -COOH as well as SiCHO (derived from monomer of HMDSO plasma), were grafted previously by plasma and chemical treatments. The growth mode of PA-ALD Al2O3 was then investigated in detail by combining results from in-situ diagnosis of spectroscopic ellipsometry (SE) and ex-situ characterization of as-deposited layers from the morphologies scanned by atomic force microscopy (AFM). In addition, the oxygen transmission rates (OTR) of the original and treated plastic films were measured. The possible reasons for the dependence of the OTR values on the surface species were explored.

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期刊信息
  • 《等离子体科学与技术:英文版》
  • 主管单位:中国科学院 中国科协
  • 主办单位:中国科学院等离子体物理研究所 中国力学学会
  • 主编:万元熙、谢纪康
  • 地址:合肥市1126信箱
  • 邮编:230031
  • 邮箱:pst@ipp.ac.cn
  • 电话:0551-5591617 5591388
  • 国际标准刊号:ISSN:1009-0630
  • 国内统一刊号:ISSN:34-1187/TL
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引(扩展库),英国科学文摘数据库
  • 被引量:89