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中文摘要：
以四异丙醇钛、三甲基铝和去离子水分别为钛源、铝源和氧源,低温条件下用原子层沉积（ALD）技术在FTO导电玻璃上制备TiO_2薄膜和掺杂不同比例元素Al的TiO_2（ATO）薄膜,并将其作为光阳极用于平面钙钛矿太阳电池。测量TiO_2和不同Al比例掺杂的ATO薄膜X射线衍射,研究掺杂比对TiO_2晶格的影响。同时,以FTO导电玻璃为基底在TiO_2（或ATO）薄膜上沉积Al做电极制备FTO/TiO_2/Al和FTO/ATO/Al,测量它们的I-V曲线,研究Al掺杂对TiO_2薄膜导电性能的影响。最后,以TiO_2和掺杂比为1：120制备的ATO为光阳极,组装成钙钛矿太阳电池器件FTO/TiO_2（或FTO/ATO）/CH_3NH_3PbI_（3-x）Cl_x/spiro-OMETAD/Au,测量电池J-V特性曲线。与TiO_2为光阳极器件相比,掺杂比为1：120的ATO基器件开路电压从0.89提高到1.01 V,填充因子从59%提高到64%,光电转换效率由9.26%提高到11.31%。发现少量Al掺杂不会改变TiO_2薄膜晶型结构,但是会改变TiO_2电阻。
英文摘要：
The Al-doped TiO2 （ATO） thin films,synthesized by atomic layer deposition（ALD） at a low tem- perature with Ti-isoporpoxide,trimethylaluminum and H20 as the Ti, A1 and 0 precursors on FTO glass substrate, were used to fabricate perovskite solar cells. The influence of the Al-doping on the microstructures and characteris- ticsof the perovskite solar cells was investigated with X-ray diffraction, scanning electron microscopy, atomic force microscopy. The results show that Al-doping significantly improves the J-V characteristics of the solar cell, but weak- ly affects the surface microstructures of the coatings. To be specific, fabricated with the ATO coatings, consisting of an A1/TiO2 ratio of 1： 120, the open circuit voltage of the solar cell, Voo,increased from 0. 89 to 1.01 V, the fill-fac- tor increased from 5% to 64% ;and the power conversion efficiency increased from 9.26% to 11.31%. In addition, a low Al-content decreased the sheet-resistance. Possible mechanisms responsible for performance improvement were tentatively discussed.
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