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中文摘要：
采用对靶溅射法在SiO2／Si基板上沉积Pt／Ti底电极。用射频（RF）溅射法在Pt／Ti／SiO2／Si基板上制备了厚度约800nm的PZT薄膜。XRD分析表明，Ar气氛中沉积，700℃下快速退火（RTA）20min所得的PZT薄膜具有钙钛矿结构；SEM、AFM分析表明，该条件下所得薄膜的表面由平均粒径约219nm的晶粒组成，较为均匀、致密。在1kHz的测试频率下，PZT薄膜的介电常数为327．6，从电滞回线上可以得出，该PZT薄膜的矫顽场强为50kV／cm，剩余极化强度和自发极化强度分别为10μC／cm^2、13μC／cm^2。
英文摘要：
Pt/Ti bottom electrode was fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system, PZT thin films with a thickness of about 800 nm were deposited on Pt/Ti/ SiO2/Si substrates by Radio Freqency（RF） magnetron sputtering system. XRD spectra analysis showed that PZT thin films deposited in Ar atmosphere and Rapid Thermal Annealing （RTA） for 20 min at 700℃ were perovskite structure; SEM and AFM micrographs showed that the mean diameter of crystallites was 219 nm on the surface of PZT thin films, and the surface of PZT thin films was uniform and density. The dielectric constant of PZT thin films was 327.6 at a test frequency of 1 kHz, electric hysteresis loop showed that coercive field, tion of PZT thin films were 50 kV/cm, 10μC/cm^2 and 13μC/cm^2.
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