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中文摘要：
用电偶腐蚀法制备多孔硅，主要研究了铂电极的优化制备工艺以及腐蚀条件对多孔硅厚度的影响，并且结合SEM，AFM等测试手段对所制备的多孔硅的表面形貌进行了分析。实验发现，在相同的腐蚀条件下，多孔硅的厚度随铂电极的厚度以及铂电极与腐蚀硅片的面积比的增大而增大。
英文摘要：
Porous silicon was prepared by using the galvanic corrosion method. The optimal process of Pt electrode and the effects of etching conditions on the thickness of porous silicon were studied. The surface morphologies of porous silicon were investigated in terms of scanning electron microscope （SEM） and atom force microscope （AFM）. The results showed that the thickness of the porous silicon layer will augment with the accretion of the thickness of Pt electrode and the area ratio of Pt electrode to etching silicon substrate in the same etching conditions.
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