中文摘要：

常温下用直流对靶磁控溅射的方法在玻璃基片上制备出了高电阻温度系数（TCR）氧化钒薄膜．通过设计正交试验，系统分析了Ar和O2的标准体积比、溅射功率、工作压强和热处理时间对氧化钒薄膜TCR的影响．对最佳工艺条件下制得的薄膜进行电阻温度特性测试，TCR达到-3．3％／K，室温方块电阻为28．5kΩ，个别样品的TCR达到-40%／K以上．扫描电子显微镜（SEM）和原子力显微镜（AFM）的形貌分析显示，这种制备方法结合适当的退火可以制备出氧化钒多晶薄膜，晶粒尺寸在纳米数量级．X射线光电子能谱（XPS）分析发现，高TCR薄膜样品中钒的总体价态接近＋4价．所有结果表明，制得的氧化钒薄膜电性能满足红外探测器的要求，且该工艺能与CMOS工艺兼容．

英文摘要：

Vanadium oxide thin films with high temperature coefficient of resistance （TCR） were deposited on glass substrates at room temperature by direct current facing targets magnetron sputtering. The effects of Ar/O2 standard molar volume, sputtering power, gas pressure and annealing time on TCR were analyzed by orthogonal experiments. Resistance-temperature measurements, scanning electron microscopy （ SEM）, atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were performed to measure the film prepared under optimal process conditions. TCR of the gained film was -3.3%/K, and square resistance at room temperature was 28.5 kΩ The TCR of several samples could be above - 4%/K. The morphology by SEM and AFM revealed polycrystalline vanadium thin films can be obtained by this method and post-annealing, and the size of grains was on nanometer level. XPS implied that the average valence of V in VOx thin films was ＋ 4. The results showed that the prepared vanadium oxide thin films could meet the demands of IR detectors, and this process was compatible with CMOS technology.