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中文摘要：
用电化学腐蚀法制备了具有不同导热系数的多孔硅样品（孔隙率为80％±2、厚度为110μm时，导热系数可降低至0．20W／m·K），并在其表面沉积了氧化钒热敏薄膜，研究了多孔硅样品的热绝缘性能对氧化钒热敏薄膜阻温特性的影响．结果表明：多孔硅良好的热绝缘性使在其表面制备的氧化钒热敏薄膜电阻的灵敏度远高于在硅基底上制备的热敏电阻的（多孔硅和硅片上的氧化钒薄膜电阻随功率变化斜率分别为120kΩ／μW和2.1kΩ／μW）、且热敏电阻的灵敏度随着多孔硅孔隙率和厚度的增大而升高．
英文摘要：
The porous silicon （PS） samples with different thermal conductivities were prepared by electrochemical method （thermal conductivity was 0.20 W/m·K when porosity and thickness were 80%4-2, 110 μm） and VOx films were deposited on the surface of the PS layers and silicon substrates respectively. The influence of the thermal isolation of the PS on resistance＇s sensitivity of VOx film was investigated. It was found that the sensitivities of resistances of the VOx films deposited on PS were better than that on silicon substrate and the resistance＇s sensitivity was improved with the increasing porosity and thickness of PS samples.
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