中文摘要：

采用超声喷雾热分解法,在Eagle2000衬底上制备ZnO薄膜。通过Hall测试、X射线衍射、扫描电子显微镜和透过率测试研究不同In掺量对ZnO薄膜电学、结构、表面形貌和光学特性的影响。结果表明：当In摩尔掺量（In与ZnO的摩尔比）为1.5%时,获得的薄膜具有较低的电阻率（2.48×10–3cm）;所有In掺杂ZnO薄膜的透过率均达到80%;将ZnO：In薄膜作为前电极应用于μc-Si：H薄膜太阳电池,可以获得5.01%的转换效率。

英文摘要：

Thin films of ZnO were prepared by ultrasonic spray pyrolysis on Eagle 2000 glass substrate. Influence of indium doping on electrical, structural, and optical properties of ZnO thin films was investigated by Hall measurement, X-ray diffraction, scanning electron microscopy, and ultraviolet-visible-near-infrared spectrometry. Results show that indium doped ZnO （ZnO：In） thin film with low resistivity of 2.48 × 10 –3 cm can be obtained at 1.5% （in mole ratio of In to ZnO）. Total transmittance of all ZnO： In thin films is about 80% in the visible and infrared range. The ZnO：In thin film are used as front anode in a μc-Si：H thin film solar cell. Relatively higher efficiency of 5.01% can be achieved.