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中文摘要：
采用原位的氢等离子体处理技术和微晶覆盖技术来降低单室沉积p-i-n型微晶硅薄膜太阳电池中的硼污染问题.通过对不同处理技术所制备电池的电流密度-电压和量子效率测试结果的比较发现，一定的氢处理时间和合适的覆盖层技术都可以在一定程度上提高电池的性能，但每种方法的影响程度各异、文中对此异同进行了分析.通过对电池陷光结构和氢等离子体处理时间的优化，在单室中获得了效率为6.39%的单结微晶硅太阳电池.
英文摘要：
In-situ hydrogen plasma treating technique and burial method using microcrystalline silicon layer were used respectively to reduce the boron contamination in intrinsic layer for the p-i-n type microcrystalline silicon thin film solar cells deposited in single chamber. The measurement results of J-V relation and the quantum efficiency of solar cells proved that both of them improve the short circuit current density of solar cells to some extent. However, each method showed different effects on the other characteristic parameters of solar cells. By optimizing the hydrogen treating time and light trapping structure, single junction microcrystalline silicon thin film solar cell with 6.39% conversion efficiency has been fabricated in single chamber.
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