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中文摘要：
利用超声雾化热分解法（USP），通过N-Al共掺的方法，制备出p型ZnO薄膜。利用霍尔测试、X射线衍射（XRD）和扫描电了显微镜分析了不同生长时间ZnO薄膜样品的电学特性、结构和表面形貌的变化。结果表明：其它条件固定时，只有在合适的生长时间条件下．才能得到电学性能较好的N-Al共掺p型ZnO薄膜（电阻率为46．8Ω·cm、迁移率为0．05m^2·V^-1·s^-1、载流子浓度是2.86×10^18cm^-3。
英文摘要：
N -Al co-doped p-type ZnO films were Fabricated by ultrasonic spray pyrolysis. Electrical properties, structural properties,and surface morphology of the ZnO films which were fabricated at diffrent growth times were studied by Hall measurement,X ray diffraction（XRD） and scanning electron microscope（SEM） ,respectively, The results indicated that N-Al co doped p type ZnO film with relatively good properties that include resistivity of 16.8 Ω·cm .hall molbility of 0.05 cm^2 V ^-1 s ^-1 and carrier concentration of 2.86 ×10^18cm^-3was obtained at a suitable growth when when conditions were fixed.
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