欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
本文采用二维准平面电路模型,对大面积甚高频等离子体增强化学气相沉积（VHF-PECVD）用多点馈入平行板电极馈入点的优化进行了数值研究,讨论了不同的多点馈入模式对平行板电极间真空电势分布均匀性的影响。研究结果表明：对于给定激发频率和尺度的大面积平行板电极,功率馈入连接点位置分布和数量成为影响电极间电势分布均匀性的两个重要可控参量,通过优化功率馈入连接点数量和连接点位置分布,可以抑制电势驻波效应及功率馈入点对数奇点效应,很大程度上有效地改善了电极间电势分布的均匀性。本文数值计算结果在一定程度上为VHF-PECVD技术用平行板电极实现大面积薄膜均匀沉积的系统设计提供了理论指导。
英文摘要：
The potential distributions,inside the paraUel-plate cathodes with multi-point power feeding used in large area very high frequency plasma enhanced chemical vapor deposition（VHF-PECVD）, were numerically calculated with two-dimensional quasi-planar circuit model to optimize the feeding points in the growth of microcrystalline Si： H films. The influence of different multi-point feeding modes on the uniformity of the inter-electrode potential distributions in vacuum was systematically studied. The results show that the number and positions of the power feeding points strongly affect the uniformity of the inter-electrode potential distributions for the given dimension and excitation frequency. We conclude that the judicious choice of the number and positions of the power feeding points provides effective solutions to suppress the negantive effects of standing wave and logarithmic singularity, and significantly improves the uniformity of the inter-electrode potential distributions.
同期刊论文项目
同项目期刊论文
Influence of front electrode and back reflector electrode on the performances of microcrystalline si
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequ
Study on the optical and electrical properties of plasma for the deposition of microcrystalline sili
Study of one-dimensional spatial distribution of the plasma luminous radicals during depositing sili
Modeling and experiments of high-pressure VHFSiH4/H-2 discharges for higher microcrystalline silicon
Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline si
期刊信息
位置：