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中文摘要：
建立二维流体模型，研究甚高频等离子体化学气相沉积（VHF-PEVCVD）高速沉积氢化微晶硅（μc-Si2H）薄膜。模型采用平行电容耦合放电方式。模拟条件与实验条件相同，均为甚高频（70MHz）、高H2稀释SiH4和高压耗尽区域。模型的几何结构是根据实际高速沉积μc-Si2H薄膜的反应腔室建立的。模型是自适应的，建立在玻尔兹曼方程和泊松方程基础之上，包含87个气相反应和25个表面反应。将模拟沉积速率与相同实验条件下的结果相比较，结果发现，模型在微晶区域运行结果与实验结果吻合得很好。
英文摘要：
A 2-D self-consistent fluid model used for high deposition rate microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapor deposition （VHF PEVCVD） is developed. The model is applied in a parallel plane capacitively coupled plasma reactor at very high frequency of 70 MHz,high diluted silane in hydrogen,and high pressure depletion area. The model which includes 87 volume reactions and 25 surface reactions is self-consistent and based on the Boltzmann equation and Poisson＇s equation. The model results are compared with the experimental data concerning film growth rate,and good agreement is found in microcrystalline region.
同期刊论文项目
同项目期刊论文
Influence of front electrode and back reflector electrode on the performances of microcrystalline si
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequ
Study on the optical and electrical properties of plasma for the deposition of microcrystalline sili
Study of one-dimensional spatial distribution of the plasma luminous radicals during depositing sili
Modeling and experiments of high-pressure VHFSiH4/H-2 discharges for higher microcrystalline silicon
Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline si
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