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中文摘要：
采用甚高频等离子体增强化学气相沉积（VHF-PECVD）技术制备了不同腔室环境下的微晶硅薄膜.对单室沉积掺杂层p材料后遗留在腔室中的硼对本征微晶i材料电学特性和结构特性的影响进行了详细研究.测试结果表明：单室沉积p层后的硼降低了微晶i层材料的暗电导,增加了材料的光敏性;由于硼对i层污染程度的不同,使得材料的激活能发生了变化;腔室中残余的硼也导致微晶硅薄膜的结晶状况恶化,同时弱化了材料的（220）择优取向.而在较高功率和较强氢稀释下制备的晶化率较高,（220）晶向明显择优的材料受硼污染影响相对减小.
英文摘要：
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） in a single-chamber under different boron-contamination conditions. The influence of boron on the properties of intrinsic microcrystalline silicon thin film was studied. The results show that the dark conductivity decreases with the increase of boron contamination and the photosensitivity shows the opposite change. The activation energy varies due to different degrees of boron contamination on these thin films. The boron contamination decreases the crystalline volume fraction and weakens the （220） prefered orientation intensity. However, the effect of contamination is less serious to the material, prepared at relatively high power and high hydrogen dilution, which has higher crystalline volume fraction and stronger （220） preferred orientation.
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