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中文摘要：
利用超声雾化热分解技术，在玻璃衬底上生长出宽带隙的Zn1-xMgxO薄膜。所有样品在可见光范围内的透过率可达到85％以上。X射线衍射的测试结果表明所有样品都具有c轴择优生长特性，并且随薄膜中Mg含量的不同出现规律性变化。光致发光谱表明Mg掺入后ZnO薄膜的紫外发射峰出现了蓝移，实现了对禁带宽度的调节。
英文摘要：
Zn1-xMgxO based wide band-gap semiconductor thin films were fabricated on glass substrates by ultrasonic spray pyrolysis method. These films have rather high average transmittance over 85% in the visible range. Results of X-ray diffraction （XRD） measurements indicate that all of films exhibit preferred c-axis orientation and also exhibit regular change with different Mg doped ratios. Photoluminescence spectrum （PL） measurements indicate that the ultraviolet emission peak of ZnO thin film occur blue shift, which means that the band gap of Zn1-xMgxO thin film can be tuned.
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