利用超声喷雾热分解(USP)技术,采用N-Al共掺法,在eagle2000衬底上制备出了电学特性较好的p型Zn0.93Mg0.07O薄膜:电阻率为18.43Ω.cm、迁移率是0.362 cm2/(V.s)、载流子浓度为1.24×1018cm-3。系统分析了前驱溶液中Al掺杂量或Mg掺杂量变化时对p型Zn1-xMgxO薄膜电学特性和结构特性的影响。紫外可见光透射测试表明:Zn1-xMgxO薄膜在紫外-可见光范围内的透过率达到了80%。
Zn0.93Mg0.07O based p type conductive thin films were fabricated on eagle2000 glass substrates by ultrasonic spray pyrolysis using N-Al co-doping method.The resistance,hall mobility,and carrier concentration are 18.43 Ω.cm,0.272 cm2/(V.s),and 1.24×1018 cm-3,respectively.The electrical and structural properties of p type Zn1-xMgxO thin film with different Al or Mg doped concentrations were analyzed systematically.These films have rather high average transmittance over 80% in the visible range.