为提高a-Si/μc-Si叠层太阳电池的效率,采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备了系列n型掺磷硅氧(SiOx:H)薄膜作为中间层,研究了CO2/Si H4气体流量比、沉积功率和PH3掺杂浓度等工艺参数对材料光电特性的影响,获得了折射率、电导率和禁带宽度能够在较大范围内调控的SiOx:H薄膜。
To improve the stable efficiency of a micromorph silicon tandem solar cell,series of phosphorous doped silicon oxide films were fabricated by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD).By varying the influences of process parameters,such as the CO2/SiH4 gas flow ratio,deposition power and phosphorus doping ratio,on the material optical and electrical properties are discussed.The silicon oxide films whose properties can be controlled in a wide range are obtained.