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中文摘要：
为充分利用太阳光谱能量,在玻璃衬底的PIN型a-Si/a-SiGe电池中直接引入了微晶硅（μc-Si：H）底电池。从透明导电氧化物（TCO）衬底的光透过率估算了PIN型a-Si：H/a-SiGe：H/μc-Si：H三结电池实现高转化效率的可行性。通过调整μc-Si：H底电池厚度考察三结电池的性能变化,结果发现,受中间电池的限制,该系列电池性能无显著变化。μc-Si：H电池量子效率（QE）测试结果表明,ZnO背反射层（BR）主要辅助800 nm以上波长光吸收。初步制备的a-Si：H/a-SiGe：H/μc-Si：H三结电池的转换效率（Eff）约为6.5%（Isc=4.75 mA/cm2,Voc=2V,FF=0.71）。
英文摘要：
The potential of PIN triple-junction Si-based thin film solar cells incorporatiing microcrystalline silicon as sub-cell（a-Si/a-SiGe/μc-Si） with a high conversion efficiency was estimated in terms of transparent conductivity oxide（TCO） substrate glass.Only varying μc-Si bottom-cell thickness,it is found that the performance of the triple-junction cells is not affected due to the mid-cell current limit.The quantum efficiency（QE） results of the sub-cells reveal that the ZnO back reflection（BR） layer assists the optical absorption only above 800 nm wavelength.
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