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中文摘要：
采用脉冲激光烧蚀高纯YSi2靶,在n型Si（100）单晶衬底上制备YSi2纳米颗粒。原子力显微镜（AFM）观察样品表面颗粒尺寸约40-50 nm。X射线光电子能谱（XPS）测试结果表明,YSi2纳米颗粒成分为Y-O-Si。室温下对样品的光致发光（PL）性能进行测试,在500 nm处有一个较大的宽峰,409 nm附近出现强度较弱的发光峰。前者与样品中Y-O-Si电荷迁移带有关,后者为衬底表面纳米尺寸SiOx复合中心离子发光。室温下,对原位制备的薄膜电学（I-V/C-V）性能进行测试,结果表明薄膜的介电常数约为13.6。
英文摘要：
Yttrium silicide nanoparticles were prepared on n-type Si（100） substrate using pulsed laser ablation method by ablating YSi2 target.The atomic force microscope images showed that the nanoparticles were about 40~50 nm.The X-ray photoemission spectroscopy measurements indicated that the nanoparticles possessed the chemical composition of Y-Si-O.The photoluminescence property of the sample was investigated at room temperature.There were two peaks located at 500 and 409 nm,which were related to transition of electrons in Y-Si-O and SiOx complex ions on the surface of Si substrate respectively.The electronical properties（I-V/C-V） of 10 nm-thick film were studied at room temperature,and the results indicated that the dielectric constant of film was near 13.6.
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