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中文摘要：
随着器件特征尺寸不断缩小,集成度不断提高,传统的基于电荷存储的非易失性FLASH存储器将面临物理与技术的极限。新型的阻变存储器具有高速读写、存储密度高、能耗低等优点引起了微电子产业界广泛关注。介绍了阻变存储器的阻变行为,综述了目前研究的存储机制、性能及其改善方法、材料体系、器件结构,并展望了阻变存储器的应用前景。
英文摘要：
With the continuing scaling of feature size of devices and increasing of integration,conventional charge-based random access nonvolatile flash memory was coming up against technical and physical limits in the near future.Resistive switching random access memory（RRAM） widely attracted attention in semiconductor industry because of the advantages in high-speed,high-density and less energy-consuming.This review presented an insight on the latest developments of RRAM.The resistive switching behavior,resistive switching mechanisms,various categories of RRAM materials,memory structure,the properties and the improving ways were included.The challenges facing the RRAM technology were summarized as it moved toward the beyond-22-nm generation of nonvolatile memories and the application prospects.
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