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The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy
  • ISSN号：0038-1101
  • 期刊名称：Solid-State Electronics
  • 时间：2013.1.1
  • 页码：12-16
  • 相关项目：铪基稀土金属多元氧化物高K栅介质的基础研究
作者： Hongbin Zhao, Hailing Tu, Feng Wei, Xinqiang Zhang|
同期刊论文项目
铪基稀土金属多元氧化物高K栅介质的基础研究
期刊论文 58 会议论文 5 专利 11
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