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核-壳和中空多面体二氧化钛制备、表征及光催化
  • ISSN号：1001-4861
  • 期刊名称：无机化学学报
  • 时间：2013
  • 页码：1419-1427
  • 相关项目：铪基稀土金属多元氧化物高K栅介质的基础研究
作者： 何明明, 莫茂松|
同期刊论文项目
铪基稀土金属多元氧化物高K栅介质的基础研究
期刊论文 58 会议论文 5 专利 11
同项目期刊论文
高真空脉冲激光沉积CeO_2(111)/Si(111)薄膜的结构与形貌研究
Fabrication and properties of Gd2O3-doped HfO2 high k film by Co-sputtering
Structure and chemical states of highly eptiaxial CeO2(001) films grown on SrTiO3 substrate by laser
Interfacial and electrical properties of atomic-layer-deposited ZrO2 with Gd2O3 passivation layer on
Characteristics and mechanism of nano-polycrystalline La2O3 thin-film resistance switching memory
A possible origin of core-level shifts in SiO2/Si stacks
Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n
高真空脉冲激光沉积CeO2 (111)/Si(111)薄膜的结构与形貌研究
低压化学气相沉积生长双层石墨烯及其电输运特性研究
Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack
Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pu
HfxZr1-xO2 Films Chemical Vapor Deposited From A Single Source Precursor of Anhydrous HfxZr1-x(NO3)4
CeO_2掺杂对HfO_2栅介质电学特性的影响
Gd_2O_3-HfO_2栅介质薄膜的外延制备及Ge-MOS电学特性分析
非易失性阻变存储器研究进展
非晶La_2O_3薄膜的阻变存储性能研究
Atomic configuration of the interface between epitaxial Gd doped HfO2 high k thin films and Ge (001)
Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k fi
Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator
Hetero-epitaxial growth of the cubic single crystalline HfO(2) film as high k materials by pulsed la
Band structure and electrical properties of Gd-doped HfO2 high k gate dielectric
Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack
Band alignment of HfO2 on SiO2/Si structure
First-Principles Study on Electronic Structure of Gd-Doped HfO2 High k Gate Dielectrics
Epitaxial growth and electrical properties of ultrathin La2Hf2O7 high-k gate dielectric films
Interfacial study and band alignment of ultrathin La2Hf2O7 films on GaAs substrates
Fabrication and Characterization of La-doped HfO2 Gate Dielectrics by Metalorganic Chemical Vapor De
Impact of Al/Hf ratio on electrical properties and band alignments of atomic-layer-deposited HfO2/Al
Chemical Vapor Deposited From A Single Source Precursor of Anhydrous HfxZr1-x(NO3)4
Magnetic Properties of FePt Nanoparticle Assembly Embedded in Atomic-Layer-Deposited Al2O3
Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-
Electric Dipole at High-k/SiO2 Interface and Physical Origin by Dielectric Contact Induced Gap State
HfO2/Al2O3/Ge Gate Stacks with Small Capacitance Equivalent Thickness and Low Interface State Densit
Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and GeO2 passiva
Photo-degradation of methylene blue using Ta-doped ZnO nanoparticle
Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-depo
The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy
Resistive switching behavior of highly epitaxial CeO2 thin film for memory application
Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on I
The improvement of performance of HfO2/Gd2O3/Si stack compared with Gd-doped HfO2 High-k films
PLA制备Tb-Si纳米颗粒及室温光致发光性能研究
Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero inte
Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O
Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device wit
Al_2O_3界面钝化与热处理对Gd_2O_3-HfO_2高k薄膜电性能影响
Modulation of the effective work function of TiN metal gate for PMOS application
Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack
Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation
Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate
钨和钽电极材料对Lu2O3薄膜基阻变存储器的影响机制研究
石墨烯/n-Si异质结光伏及光响应性能研究
YSi2纳米颗粒的制备及光学、电学性能研究
Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure
期刊信息
  • 《无机化学学报》
  • 中国科技核心期刊
  • 主管单位:中国科学技术协会
  • 主办单位:中国化学会
  • 主编：游效曾
  • 地址：南京市南京大学仙林区化学楼
  • 邮编：210023
  • 邮箱：wjhx@nju.edu.cn
  • 电话：025-89682307
  • 国际标准刊号：ISSN：1001-4861
  • 国内统一刊号：ISSN：32-1185/O6
  • 邮发代号:28-133
  • 获奖情况:
  • 2007年获江苏省优秀期刊奖,2009年获华东地区优秀期刊奖
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国科学引文索引（扩展库）,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:19587