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Resistive switching behavior of highly epitaxial CeO2 thin film for memory application
  • ISSN号：1862-6270
  • 期刊名称：Phys. Status Solidi RRL
  • 时间：2014.1.1
  • 页码：95-99
  • 相关项目：铪基稀土金属多元氧化物高K栅介质的基础研究
作者： Jun Zhang, Hongbin Zhao, Feng Wei, Mengmeng Yang,|Qiuyun Chen, and Jun Chen|
同期刊论文项目
铪基稀土金属多元氧化物高K栅介质的基础研究
期刊论文 58 会议论文 5 专利 11
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