中文摘要：

采用低压化学气相沉积法（LPCVD）以铜箔为生长衬底来制备石墨烯。XRD表征得石墨烯生长前后铜箔衬底主要为（100）晶面，而且铜箔在高温下退火晶粒明显长大有利于高质量石墨烯的生长。拉曼光谱表明所制备的石墨烯为双层结构。通过转移、刻蚀等工艺制备了石墨烯场效应晶体管（G-FET）原型器件，其转移特性曲线（IDS-VGS）表明所制备的石墨烯表现为P型输运特性。在器件中石墨烯的XPS图谱说明了石墨烯吸附有有机物基团，导致p型特性的部分原因。同时本文研究了真空退火对G-FET器件性能的影响，结果表明：退火温度为200℃时，G-FET的空穴载流子迁移率最佳；而随着温度增加，开关比（ON．OFFratio）在不断减小，载流子迁移率迅速在降低。

英文摘要：

In this report, a low pressure chemical vapor deposition （LPCVD） was developed for the growth of graphene on Cu foils. Cu foils with （100） orientation was clearly observed in X-ray diffraction （XRD） pattern and nothing changed before or after graphene growth; and copper grain grown up obviously at high temperature was found to benefit the growth of high-quality graphene. Raman spectra suggested that the deposited graphene films were of bilayer. The graphene field effect transistor （G-FET） model device was fab- ricated with graphene ribbon as channel by removal and lithographic process. The transfer characteristic curve （IDS-VGS） of the typi- cal G-FET device was analyzed and the prepared graphene represented p-type transport characteristic. XPS spectrum of graphene in the device suggested that the graphene adsorbed organic group to make the graphene display p-type characteristic. Meanwhile, the effect of the vacuum annealing on the characteristic of the G-FET device was studied. The results suggested the mobilities for hole carriers of G- FET achieved optimum when the devices were annealed at 200℃ in the vacuum; the ON-OFF ratio minished quickly along with the temperature. The mobilities of the graphene started to degrade rapidly after annealed at 200℃.