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中文摘要：
采用脉冲激光烧蚀技术（PLA）在n型Si（100）单晶衬底上制备Tb-Si纳米颗粒。原子力显微镜（AFM）观察样品的表面形貌,发现样品表面是均匀分布的纳米颗粒,颗粒尺寸在10~20 nm之间,分布密度大约为6×1010/cm2。光电子能谱（XPS）及高分辨透射电镜（HRTEM）分析表明,纳米尺度的单晶硅化物颗粒的主要成分为Tb-Si及少量Tb-Si-O结构。室温下以荧光为激发光对样品的光致发光（photoluminescence）性能进行测试,结果表明样品在可见光区具有较强的发光现象,主要有4个发光峰,分别位于485,545,585和620 nm附近,这些发光峰主要由Tb3＋中电子在不同能级之间的跃迁造成。
英文摘要：
The Tb-Si nanoparticles were prepared on n-type Si（100） wafer by Pulsed Laser Ablation（PLA） method.The Atom Force Microscope（AFM） was applied to detect the surface morphology of the sample.The results showed that the well-distributed nanoparticles were fabricated on the surface of Si substrate,and the size of most of nanoparticles was located between 10 and 20 nm,with a surface density of 6×1010/cm2.The X-ray Photoemission Spectroscopy（XPS） and High-Resolution Transmission Electron Microscopy（HRTEM） results showed that the nanoparticles were mainly Tb-Si and Tb-Si-O.The photoluminescence properties of the sample were characterized using fluorescence as the excitation at room temperature,and the visible photoluminescence were also detected.Four peaks are observed at 490,545,585 and 620 nm respectively in the spectra,which resulted from the transition of electrons in Tb3＋ ions between different energy levels.
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