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Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on I
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2011.9.9
  • 页码：132902-
  • 相关项目：铪基稀土金属多元氧化物高K栅介质的基础研究
作者： Chen, Dapeng|Tu, Hailing|Zhao, Hongbin|Yang, Mengmeng|Wang, Xiaona|Xiong, Yuhua|Yang, Zhimin|Du, Jun|Wang, Wenwu|
同期刊论文项目
铪基稀土金属多元氧化物高K栅介质的基础研究
期刊论文 58 会议论文 5 专利 11
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