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Fabrication and Characterization of La-doped HfO2 Gate Dielectrics by Metalorganic Chemical Vapor De
  • ISSN号：0169-4332Electronic Resource Number: 10.1016/s0169-4332(03)00702-5
  • 期刊名称：Applied Surface Science
  • 时间：2010
  • 页码：2496-2499
  • 相关项目：铪基稀土金属多元氧化物高K栅介质的基础研究
作者： Liuying Huang, Aidong Li, Wenqi Zhang, Hui Li, Yi|
同期刊论文项目
铪基稀土金属多元氧化物高K栅介质的基础研究
期刊论文 58 会议论文 5 专利 11
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