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中文摘要：
针对纳米器件中的典型几何特征，制备了3种纳米结构，采用扫描电子显微镜（SEM）、原子力显微镜（AFM）等测量工具对所制备的纳米样板进行了测量、分析和表征。提出转换薄膜厚度为线宽的公称值、基于多层薄膜淀积技术制备纳米宽度结构的方法，制备出了具有名义线宽尺寸分别为20nm、25nm、35nm的纳米栅线结构。用离线的图像分析算法对所制备的纳米线宽样板的线边缘粗糙度／线宽粗糙度（LER／LWR）以及栅线线宽的一致性进行了评估。实验表明所制备纳米线宽样板的栅线具有较好的一致性，LER／LWR值小，且具有垂直的侧壁。采用电子束直写技术（EBL）和感应耦合等离子体刻蚀（ICP）制备了名义高度为220nm的硅台阶样板。实验表明刻蚀后栅线边缘LER／LWR的高频成分减少，相关长度变长，均方根偏差值（σ）增大。采用聚焦离子束（FIB）制备了纳米单台阶和多台阶结构，并对Z方向的尺度与加工能量之间的关系进行了分析。
英文摘要：
Three types of nano-scale structure have been fabricated and characterized using SEM, AFM, etc. In this paper, multilayer thin film deposition technique has been used to fabricate nano-scale structure with 20nm, 25 nm and 35 nm line-width. LER and LWR of nanoline are evaluated with an offline image analysis algorithm. The experimental results indicate that the LER/LWR of the lines is low and the uniform of the lines is high. EBL and ICP technique are employed to fabricate grating pattems with nominal height 220 nm. The result shows that the high frequency fluctuations of line edges after etching decrease, the correlation length increases and values of root mean square deviation （tr） increase. Single and multiple nano steps have been fabricated using FIB technique, and the relationship between the size of the Z-axis and energy of process are analyzed.
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