采用甚高频等离子体增强化学气相沉积技术,在相对较高气压和较高功率条件下,制备了不同硅烷浓度的微晶硅材料,材料沉积速率随硅烷浓度的增加而增大,通过对材料的电学特性和结构特性的分析得知:获得了沉积速率超过1nm/s高速率器件质量级微晶硅薄膜,并且也初步获得了效率达6.3%的高沉积速率微晶硅太阳电池。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different silane concentrations using relatively high pressure and power. The deposition rate of the materials increases with the increase of the silane concentration. Through analysis of the structural and electrical properties of the materials, it can be concluded that with a high depositian rate (above lnm/s), device-quality microcrystalline silicon is obtained. As a result,a microcrystalline silicon solar cell with 6.3% conversion efficiency is obtained.