欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
使用光发射谱（OES）对甚高频等离子增强化学气相沉积（VHF-PECVD）技术沉积硅薄膜时的等离子体发光基团的空间分布进行了在线监测和研究.研究表明：等离子体的不同发光基团都存在着一个中间强度较大的区域和两边电极附近的暗区;增大硅烷浓度和提高辉光功率都会增大SiH＊峰强度;硼烷的加入,使得SiH＊和Hα＊峰强度增大,但硼烷流量变化的影响很小;硼烷流量增大,材料的晶化率下降,而I[Hα＊]/I[SiH＊]值却上升;当硅烷浓度改变时,空间各个区域内的I[Hα＊]/I[SiH＊]值的变化规律不同;而改变辉光功率或改变硼烷流量的情况下,空间各个点的I＊/I＊值变化规律都是相同的.
英文摘要：
One-dimensional spatial distribution of the plasma luminous radicals during depositing silicon films and its online monitoring were studied using optical emission spectroscopy. The results indicated that there existed an evident luminous zone in the middle of the plasma and a dark zone near the two electrodes. The intensity of SiH＊ and Hα＊ peak increased with the increase of silane concentration, power, and the incorporation of borane. Crystalline volume fraction of thin films decreased with the increase of borane flow rate, but the ratio of I[Hα＊]/I[SiH＊] was also increased. The ratio of I[Hα＊]/I[SiH＊] varied in different ways at different positions with the variation of silane concentration. However, an unigue variation of the ratio all over the plasma is observed with the variation of the discharge power or the borane flow rate.
同期刊论文项目
同项目期刊论文
Influence of front electrode and back reflector electrode on the performances of microcrystalline si
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequ
Study on the optical and electrical properties of plasma for the deposition of microcrystalline sili
Study of one-dimensional spatial distribution of the plasma luminous radicals during depositing sili
Modeling and experiments of high-pressure VHFSiH4/H-2 discharges for higher microcrystalline silicon
Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline si
期刊信息
位置：