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Bias-selective dual-operation-mode ultraviolet schottky-barrier photodetectors fabricated on high-re
  • ISSN号：1041-1135
  • 期刊名称：IEEE Photonics Technology Letters
  • 时间：2012
  • 页码：2203-2205
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Xie, Feng|Lu, Hai|Chen, Dunjun|Ren, Fangfang|Zhang, Rong|Zheng, Youdou|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
同项目期刊论文
红橙光InGaN/GaN量子阱的结构与光学性质研究
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
Solar-blind ultraviolet AlInN/AlGaN distributed Bragg reflectors
Exploitation of polarization in back-illuminated AlGaN avalanche photodiodes
GaN纳米柱的量子效率研究
Fe/GaN、Fe_3N/GaN的生长及其性能研究
Performance comparison of front- and back-illuminated AlGaN-based metal-semiconductor-metal solar-bl
Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN
The Effects of Polarization on the Current Transport Mechanisms for UV-LEDs
Dislocation Clustering and Luminescence Nonuniformity in Bulk GaN and Its Homoepitaxial Film
Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-met
High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet p-i-n Photodetectors
Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film T
High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN t
Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal-Semiconductor-Metal Photodetectors for High-Tem
Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annea
Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
Temperature dependent growth of InGaN/GaN single quantum well
Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets
Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Su
Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zin
Characteristics of polarization-doped N-face III-nitride light-emitting diodes
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Qua
Investigation of optical properties of InGaN-InN-InGaN/GaN quantum-well in the green spectral regime
Magnetic and electrical properties of epsilon-Fe3N on c-plane GaN
Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfa
On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuat
Dielectric Properties of GaN in THz Frequencies
GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation
Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates
UV Light-Emitting Diodes at 340 nm Fabricated on a Bulk GaN Substrate
Metal-Semiconductor-Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate
Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1-xN films with
Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes
High Deep-Ultraviolet Quantum Efficiency GaN P-I-N Photodetectors with Thin P-GaN Contact Layer
利用X射线衍射研究Mg掺杂的InN的快速退火特性
GaN薄膜中的马赛克结构随厚度发生的变化
InN的光致发光特性研究
紫外波段SiO2／Si3N4介质膜分布式布拉格反射镜的制备与研究
GaN nanopillars with a nickel nano-island mask
用氢化物气相外延（HVPE）法生长的氮化铟薄膜的性质研究
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
高灵敏度宽禁带半导体紫外探测器
LPCVD法在GaN上生长Ge薄膜及其特性
AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
Reverse leakage current in AIGaN-based ultraviolet light-emitting diodes
Effects of V/III ratio on the growth of a-plane GaN films
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
Solar-blind ultraviolet band-pass filter based on metal-dielectric multilayer structures
Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask
Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate